N TYPE GE CAN BE FUN FOR ANYONE

N type Ge Can Be Fun For Anyone

s is always that with the substrate materials. The lattice mismatch causes a substantial buildup of pressure Power in Ge levels epitaxially grown on Si. This strain Power is primarily relieved by two mechanisms: (i) technology of lattice dislocations on the interface (misfit dislocations) and (ii) elastic deformation of the two the substrate plus t

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